Reliability Analysis of SiGe Heterojuncion Bipolar Transistor
Abstract
This paper covers and contrasts the various reliability issues of SiGeHBTs. Self heating and elevated junction temperature are focused as emerging major reliability issues which effects both reliability and performance of the device. As a foundation for study, an analytical thermal model is developed. Based on the model different parameters of 200 GHz SiGeHBT are measured.
References
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